University of Tokyo develops organic flash memory
Bangalore: The researchers at the University of Tokyo have developed the "organic flash memory," a non-volatile memory, which has a basic structure as a flash memory but is made entirely of organic materials. The erasing and reading voltages of this flash memory are as low as 6 volt (V) and 1V, respectively, but data can be written in and erased from the memory more than 1,000 times.
As reported by Tech-On, the flash memory can be used for large-area sensors, electronic paper and other big electronic devices, if its memory retention time can be extended, the University said. The organic flash memory was developed by a research group led by Takeo Someya and Tsuyoshi Sekitani, Professor and Research Associate at the Department of Electrical Engineering and Information Systems, Graduate School of Engineering, the University of Tokyo.
The prototype includes a polyethylene naphthalate (PEN) resin sheet as a substrate with an array of 26 by 26 2T memory cells placed on it. The sheet is flexible enough to be bent until its radius is 6mm without causing damage. The short memory retention can be increased by reducing the size of the element and employing a longer self-assembled monolayer (SAM), which is made of phosphoric acid with an alkyl chain. In the prototype, it is 2nm thin.
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